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IXTC110N25T
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
ISOPLUS220 (IXTC) Outline
g fs
C iss
C oss
C rss
t d(on)
V DS = 10V, I D = 55A, Note 1
V GS = 0V, V DS = 25V, f = 1MHz
Resistive Switching Times
65
110
9400
850
55
19
S
pF
pF
pF
ns
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
V GS = 15V, V DS = 0.5 ? V DSS , I D = 55A
R G = 2 Ω (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 25A
27
60
27
157
40
50
ns
ns
ns
nC
nC
nC
1.Gate 2. Drain
3.Sourc e 4. I solated
Note: Bottom heatsink (Pin 4) is
electrically isolated from Pins 1,2, & 3.
R thJC
0.69 ° C/W
R thCS
Source-Drain Diode
0.21
° C/W
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
I S
I SM
V SD
t rr
I RM
Q RM
V GS = 0V
Repetitive, Pulse Width Limited by T JM
I F = 55A, V GS = 0V, Note 1
I F = 55A, -di/dt = 250A/ μ s
V R = 100V, V GS = 0V
170
27
2.3
110
350
1.2
A
A
V
ns
A
μ C
Notes:
1. Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
2. On through-hole package, R DS(ON) kelvin test contact location must be
5mm or less from the package body.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,860,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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